PART |
Description |
Maker |
BLF4G20LS-110B |
From old datasheet system UHF power LDMOS transistor 110 W LDMOS power transistor for base station applications at frequencies
|
Philips Semiconductors NXP Semiconductors N.V.
|
BLF6G27S-4508 BLF6G27S-45 BLF6G27-45 |
Product description45 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. WiMAX power LDMOS transistor
|
NXP Semiconductors N.V.
|
BLF6G13L-250P BLF6G13LS-250P |
Product description250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz. Power LDMOS transistor BLF6G13LS-250P<SOT1121B (CDFM4)|<<http://www.nxp.com/packages/SOT1121B.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
BLF7G27L-140 |
Power LDMOS transistor
|
Philips Semiconductors
|
LX703-14 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
BLF8G27LS-100P-15 |
Power LDMOS transistor
|
NXP Semiconductors
|
BLP15M7160P-15 |
Power LDMOS transistor
|
NXP Semiconductors
|
LP702-14 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
BLF7G20L-160P |
Power LDMOS transistor
|
Philips Semiconductors
|
BLP05H635XR-15 |
Power LDMOS transistor
|
NXP Semiconductors
|